| VGS (th) (Max) @ Id: | 4V @ 1mA |
|---|---|
| Technologie: | MOSFET (Metal Oxide) |
| Leverancier Device Pakket: | PG-SOT223-4 |
| Serie: | SIPMOS® |
| Rds On (Max) @ Id, VGS: | 130 mOhm @ 2.9A, 10V |
| Vermogensverlies (Max): | 1.8W (Ta) |
| Packaging: | Tape & Reel (TR) |
| Verpakking / doos: | TO-261-4, TO-261AA |
| Temperatuur: | -55°C ~ 150°C (TJ) |
| montage Type: | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds: | 875pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 10V |
| FET Type: | P-Channel |
| FET Feature: | - |
| Drain naar de Bron Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25 ° C: | 2.9A (Ta) |
BSP613PE6327
BSP613PH6327XTSA1
MOSFET P-CH 60V 2.9A SOT-223
BSP61,115
TRANS PNP DARL 60V 1A SOT223
BSP613P H6327
BSP612P
BSP613
BSP612PH6327XTSA1
SMALL SIGNAL+P-CH
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BSP613P L6327
2N3417
TRANS NPN 50V 0.5A TO-92
JANTXV2N2219AL
TRANS NPN 50V 0.8A
SUD50N03-09P-E3
MOSFET N-CH 30V 63A TO252
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ATS-16H-140-C1-R0
HEATSINK 25X25X25MM L-TAB
ATS-19H-16-C1-R0
HEATSINK 54X54X10MM XCUT
ATS-16G-78-C1-R0
HEATSINK 25X25X35MM R-TAB
ATS-16C-51-C2-R0
HEATSINK 30X30X20MM L-TAB T766
