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Prijs | |
---|---|
2500 | $0.836 |
5000 | $0.805 |
VGS (th) (Max) @ Id: | 2.5V @ 200µA |
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Leverancier Device Pakket: | Die |
Serie: | eGaN® |
Rds On (Max) @ Id, VGS: | 190 mOhm @ 2.5A, 5V |
Vermogen - Max: | - |
Packaging: | Tape & Reel (TR) |
Verpakking / doos: | Die |
Temperatuur: | -40°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds: | 22pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs: | 0.22nC @ 5V |
FET Type: | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
FET Feature: | GaNFET (Gallium Nitride) |
Drain naar de Bron Voltage (Vdss): | 60V, 100V |
Current - Continuous Drain (Id) @ 25 ° C: | 1.7A, 500mA |