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VGS (th) (Max) @ Id: | 5.5V @ 250µA |
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Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | D-Pak |
Serie: | HEXFET® |
Rds On (Max) @ Id, VGS: | 235 mOhm @ 8A, 10V |
Vermogensverlies (Max): | 110W (Tc) |
Packaging: | Tube |
Verpakking / doos: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Temperatuur: | -55°C ~ 175°C (TJ) |
montage Type: | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds: | 830pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Drain naar de Bron Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25 ° C: | 13A (Tc) |